ATE36207T1 - Basiszelle fuer integrierte verknuepfungsschaltungsfelder. - Google Patents
Basiszelle fuer integrierte verknuepfungsschaltungsfelder.Info
- Publication number
- ATE36207T1 ATE36207T1 AT83103612T AT83103612T ATE36207T1 AT E36207 T1 ATE36207 T1 AT E36207T1 AT 83103612 T AT83103612 T AT 83103612T AT 83103612 T AT83103612 T AT 83103612T AT E36207 T1 ATE36207 T1 AT E36207T1
- Authority
- AT
- Austria
- Prior art keywords
- base cell
- integrated combination
- combination circuits
- cell
- respect
- Prior art date
Links
- 210000004027 cell Anatomy 0.000 abstract 3
- 239000002184 metal Substances 0.000 abstract 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 2
- 229920005591 polysilicon Polymers 0.000 abstract 2
- 238000003491 array Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/90—Masterslice integrated circuits
- H10D84/903—Masterslice integrated circuits comprising field effect technology
- H10D84/907—CMOS gate arrays
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
- Y10S257/923—Active solid-state devices, e.g. transistors, solid-state diodes with means to optimize electrical conductor current carrying capacity, e.g. particular conductor aspect ratio
Landscapes
- Design And Manufacture Of Integrated Circuits (AREA)
- Semiconductor Integrated Circuits (AREA)
- Logic Circuits (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Stabilization Of Oscillater, Synchronisation, Frequency Synthesizers (AREA)
- Junction Field-Effect Transistors (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
IT67501/82A IT1191188B (it) | 1982-04-15 | 1982-04-15 | Cella elementare per reti di porte logiche a circuito integrato |
EP83103612A EP0092176B1 (en) | 1982-04-15 | 1983-04-14 | Basic cell for integrated-circuit gate arrays |
Publications (1)
Publication Number | Publication Date |
---|---|
ATE36207T1 true ATE36207T1 (de) | 1988-08-15 |
Family
ID=11302946
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AT83103612T ATE36207T1 (de) | 1982-04-15 | 1983-04-14 | Basiszelle fuer integrierte verknuepfungsschaltungsfelder. |
Country Status (10)
Country | Link |
---|---|
US (1) | US4595940A (en]) |
EP (1) | EP0092176B1 (en]) |
JP (1) | JPS59938A (en]) |
AT (1) | ATE36207T1 (en]) |
CA (1) | CA1187624A (en]) |
DE (2) | DE3377603D1 (en]) |
DK (1) | DK162867C (en]) |
ES (1) | ES521503A0 (en]) |
IT (1) | IT1191188B (en]) |
NO (1) | NO164947C (en]) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4783749A (en) * | 1985-05-21 | 1988-11-08 | Siemens Aktiengesellschaft | Basic cell realized in the CMOS technique and a method for the automatic generation of such a basic cell |
DE4002780C2 (de) * | 1990-01-31 | 1995-01-19 | Fraunhofer Ges Forschung | Basiszelle für eine kanallose Gate-Array-Anordnung |
US5291043A (en) * | 1990-02-07 | 1994-03-01 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor integrated circuit device having gate array |
US6399972B1 (en) * | 2000-03-13 | 2002-06-04 | Oki Electric Industry Co., Ltd. | Cell based integrated circuit and unit cell architecture therefor |
JP2011242541A (ja) * | 2010-05-17 | 2011-12-01 | Panasonic Corp | 半導体集積回路装置、および標準セルの端子構造 |
CA2977942C (en) | 2010-12-20 | 2021-08-03 | The Nielsen Company (Us), Llc | Methods and apparatus to determine media impressions using distributed demographic information |
AU2013204865B2 (en) | 2012-06-11 | 2015-07-09 | The Nielsen Company (Us), Llc | Methods and apparatus to share online media impressions data |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1440512A (en) * | 1973-04-30 | 1976-06-23 | Rca Corp | Universal array using complementary transistors |
JPS5925381B2 (ja) * | 1977-12-30 | 1984-06-16 | 富士通株式会社 | 半導体集積回路装置 |
US4356504A (en) * | 1980-03-28 | 1982-10-26 | International Microcircuits, Inc. | MOS Integrated circuit structure for discretionary interconnection |
JPS5749253A (en) * | 1980-09-09 | 1982-03-23 | Toshiba Corp | Semiconductor integrated circuit |
-
1982
- 1982-04-15 IT IT67501/82A patent/IT1191188B/it active
-
1983
- 1983-04-05 JP JP58058808A patent/JPS59938A/ja active Granted
- 1983-04-11 DK DK158383A patent/DK162867C/da not_active IP Right Cessation
- 1983-04-11 CA CA000425602A patent/CA1187624A/en not_active Expired
- 1983-04-14 EP EP83103612A patent/EP0092176B1/en not_active Expired
- 1983-04-14 DE DE8383103612T patent/DE3377603D1/de not_active Expired
- 1983-04-14 AT AT83103612T patent/ATE36207T1/de not_active IP Right Cessation
- 1983-04-14 DE DE198383103612T patent/DE92176T1/de active Pending
- 1983-04-14 NO NO831320A patent/NO164947C/no unknown
- 1983-04-15 ES ES521503A patent/ES521503A0/es active Granted
- 1983-04-15 US US06/485,170 patent/US4595940A/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
DK162867C (da) | 1992-05-04 |
NO164947C (no) | 1990-11-28 |
NO831320L (no) | 1983-10-17 |
JPS59938A (ja) | 1984-01-06 |
EP0092176A2 (en) | 1983-10-26 |
IT8267501A0 (it) | 1982-04-15 |
DE92176T1 (de) | 1985-10-24 |
NO164947B (no) | 1990-08-20 |
DK162867B (da) | 1991-12-16 |
DK158383D0 (da) | 1983-04-11 |
DE3377603D1 (en) | 1988-09-08 |
JPH0254670B2 (en]) | 1990-11-22 |
CA1187624A (en) | 1985-05-21 |
IT1191188B (it) | 1988-02-24 |
EP0092176B1 (en) | 1988-08-03 |
ES8404111A1 (es) | 1984-04-01 |
US4595940A (en) | 1986-06-17 |
DK158383A (da) | 1983-10-16 |
EP0092176A3 (en) | 1985-08-21 |
ES521503A0 (es) | 1984-04-01 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR860003659A (ko) | 반도체집적회로장치 | |
WO1979000461A1 (fr) | Circuits integres a semi-conducteurs mis complementaires | |
IT1206967B (it) | Procedimento per la produzione di dispositivi a semiconduttore come circuiti integrati e transistori ad effetto di campo su silicio monocri stallino | |
JPS5293278A (en) | Manufacture for mos type semiconductor intergrated circuit | |
DE3579675D1 (de) | Kombinierter lateraler mos/bipolarer transistor hoher leitfaehigkeit. | |
DE3576612D1 (de) | Halbleiteranordnung mit mos-transistoren. | |
ATE36207T1 (de) | Basiszelle fuer integrierte verknuepfungsschaltungsfelder. | |
JPS56162875A (en) | Semiconductor device | |
JPS5618456A (en) | Substrate potential generator | |
DE3668716D1 (de) | Halbleitersubstratvorspannungsgenerator. | |
KR880009448A (ko) | 반도체 집적회로 장치 | |
KR920005391A (ko) | 바이폴라 트랜지스터 · 절연 게이트형 트랜지스터 혼재 반도체장치 | |
EP0160183A3 (en) | High voltage mos field effect transistor | |
JPS54138370A (en) | Flip chip mounting body | |
JPS5339087A (en) | Integrated circuit | |
JPS52122090A (en) | Semiconductor integrated circuit device | |
JPS5297683A (en) | Semiconductor circuit device | |
ES387993A1 (es) | Una disposicion de circuito integrado semiconductor. | |
JPS56108257A (en) | Semiconductor integrated circuit device | |
JPS6484745A (en) | Semiconductor device | |
JPS56150849A (en) | Semiconductor integratd circuit device | |
JPS5211783A (en) | Field effect transistor for integrated circuits | |
JPS5412279A (en) | Production of transistors | |
JPS5673471A (en) | Mis type integrated circuit | |
JPS5683962A (en) | Substrate bias circuit |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
UEP | Publication of translation of european patent specification | ||
REN | Ceased due to non-payment of the annual fee |